Tuesday Posters

(click on the title for the abstract)


a-Si and Related Compounds
PT01

Light-induced Degradation of Multijunction a-Si:H/μc-Si:H Solar Cells

O.I. Chesta (1), V.M. Emelyanov (1), A.I. Kosarev (2), D.L. Orekhov (3), M.Z. Shvarts (1,3), and E.I. Terukov (1,3)

1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

2. National Institute of Astrophysics, Optics and Electronics, Puebla, 72840, Mexico

3. R&D Center of Thin Film Technologies in Energetics under Ioffe Institute LLC, 194064 St. Petersburg, Russia

PT02

Photo-electronic Characteristics of a-Si:H/a-Ge0.97Si0.03:H Photovoltaic Devices and Their Relation to the Device Configuration

Francisco T. Avila, Andrey Kosarev, and Oleksandr Malik

Electronics, National Institute of Astrophysics Optics and Electronics, Luis Enrique Erro #1, 72840, Puebla, Mexico

PT03

Effect of Hydrogen Concentration on Structure and Photoelectric Properties of a-Si:H Films Modified by Femtosecond Laser Pulses

Mark Khenkin (1), Andrey Emelyanov (1), Andrey Kazanskii (1), Pavel Forsh (1,2), Martynas Beresna (3), Mindaugas Gecevicius (3), and Peter Kazansky (3)

1. M.V. Lomonosov Moscow State University, Physics Department, Moscow, 119991 Russia

2. National Research Centre "Kurchatov Institute", Moscow, 123182 Russia

3. Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ UK

PT04

Ultra High Quality Amorphous-Crystalline Silicon Heterostructures Prepared by Grid-Biased Triode RF PECVD

Pratish Mahtani (1), Keith R. Leong (1), Bastien Jovet (1), Davit Yeghikyan (1), and Nazir P. Kherani (1,2)

1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada

2. Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada

PT05

Electronic Properties of Undoped Microcrystalline Silicon Oxide Films

Steve Reynolds (1), Stephan Michard (2), Shuo Wang (2), and Vlad Smirnov (2)

1. Division of Physics, University of Dundee, Nethergate, Dundee DD1 4HN, UK

2. IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany

PT06

Bifacial Microcrystalline Silicon Solar Cells with Improved Performance due to μc-SiOx:H Doped Layers

Vladimir Smirnov, Andreas Lambertz, and Friedhelm Finger

IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany

PT07

Radial p-n Junction Solar Cells Based on Oriented Silicon Nanowire Arrays with Low Temperature Phosphorus doping

Gangqiang Dong, Fengzhen Liu, Hailong Zhang, and Meifang Zhu

University of Chinese Academy of Sciences, Beijing 100049, China

PT08

Local Surface Potential on Microcrystalline Silicon Films

Takashi Itoh (1), Takashi Sakai (1), Takanori Ito (1), Hiroshi Kuriyama (1), Toshimasa Suzuki (2), and Shuichi Nonomura (2)

1. Department of Electrical and Electronic Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

2. Environment Renewable Energy System Division, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

PT09

a-Si:H n-i-p Solar Cells Fabricated at 100°C for High Voc Top Cell of Spectrum Splitting Solar Cells

Dong-Won Kang (1), Sinae Kim (1), Porponth Sichanugrist (1), and Makoto Konagai (1,2)

1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan

2. Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan

PT10

The Role of Nx-Si-Oy Bonding Configuration in Yielding Strong Blue to Red Photoluminescence from Amorphous SiNxOy Film

Hengping Dong (1), Kunji Chen (2), Pengzhan Zhang (2), Wei Li (2), Jun Xu (2), Zengyuan Liu (1), and Zhengfeng Sun (1)

1. Taizhou Institute of Science and Technology, Nanjing University of Science and Technology, Taizhou 225300, China

2. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

PT11

Photothermal Radiometry for Estimation of Defect Density of Silicon Thin Films with Large Area for Solar Cells

Norimitsu Yoshida, Yusuke Fukaya, Katsuhiro Ishii, Yosuke Matsuda, and Shuichi Nonomura

Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu, JAPAN

PT12

Light Induced Changes in Hydrogenated Polymorphous Silicon Solar Cells: Beyond the Staebler-Wronski Effect

Ka-Hyun Kim (1), Erik V. Johnson (2), and Pere Roca i Cabarrocas (2)

1. Korea Institute of Energy Research - KIER-UNIST Advanced Center for Energy, Ulsan, South Korea

2. Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, Palaiseau, France

PT13

Applying a Dimensionless Joint Density of States Formalism to the Analysis of the Optical Response of Hydrogenated Amorphous Silicon

Jasmin J. Thevaril (1) and Stephen K. O'Leary (2)

1. Department of Electrical and Computer Engineering, University of Windsor, 401 Sunset Avenue, Windsor, Ontario, Canada N9B 3P4

2. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia, Canada, V1V 1V7

PT14

Hydrogen Kinetics in a-Si:H and a-SiC:H Thin Films Investigated by Real-time ERD

S. Halindintwali (1), J. Khoele (1), B. Julies (1), and C.M. Comrie (2, 3)

1. Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa

2. Department of Physics, University of Cape Town, Rondebosch 7700, South Africa

3. Materials Research Department, iThemba LABS, P.O. box 722, Somerset West 7129, South Africa

PT15

Amorphous Silicon Nitride Films Prepared by Reactive Sputtering

Makoto Nozawa and Masao Isomura

Course of Electrical and Electronic System, Graduate School of Engineering, Tokai University, 4-1-1 kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

PT16

Infrared Detector Based on Germanium Thin Films Fabricated at Low Temperature (200°C)

Ricardo Jimenez (1), Mario Moreno (1), Alfonso Torres (1), Roberto Ambrosio (2), Andrey Kosarev (1), Pedro Rosales (1), and Carlos Zuniga (1)

1. National Institute of Astrophysics, Optics and Electronics, INAOE, Luis Enrique Erro No. 1, Santa Maria Tonantzintla, Puebla, México

2. Electrical and Computing Department-IIT, UACJ University, Av. Del Charro 450N, 32310, Cd. Juárez, México

PT17

A Comparative Study of the Infrared-sensing Properties of Silicon and Germanium Based Thin Films

Mario Moreno (1), Alfonso Torres (1), Roberto Ambrosio (2), Andrey Kosarev (1), Ricardo Jimenez (1), Alejandra Perez (1), Pedro Rosales(1), and Carlos Zuniga (1)

1. National Institute of Astrophysics, Optics and Electronics, INAOE, Luis Enrique Erro No. 1, Santa Maria Tonantzintla, Puebla, México

2. Electrical and Computing Department-IIT, UACJ University, Av. Del Charro 450N, 32310, Cd. Juárez, México

PT18

The Mechanisms Behind the Enhancement of the Near-infrared Light Emission due to Er+Yb Ions in an Optical Microcavity

Ivan Braga Gallo (1), Antonio Ricardo Zanatta (1), Alain Braud (2), and Richard Moncorgé (2)

1. Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos 13560-970, SP - Brasil

2. Matériaux Instrumentation Laser, Université de Caen Basse-Normandie, Caen F-14050 cedex 4, Basse-Normandie - France

PT19

Experimental Determination of the Thermo-optic Coefficient of Amorphous Silicon Nitride Films in the Visible and Near-Infrared Energy Ranges

Antonio Ricardo Zanatta and Ivan Braga Gallo

Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos 13560-970, SP - Brasil

Nano-and Microcrystalline Silicon
PT20

c-Si/nc-3C-SiC:H Heterojunction Diodes with Buffer Layer

Ryohei Ushikusa and Akimori Tabata

Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603

PT21

Correlations Between the Material Structure and the Solar Cell Device Performance of Hydrogenated Nanocrystalline Silicon based Solar Cells

Kathrin J. Schmidt (1), Stephen K. O'Leary (1), Yiheng Lin (2), Guangrui Xia (2), Mario Beaudoin (3), Guozhen Yue (4), and Baojie Yan (4)

1. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia, Canada, V1V 1V7

2. Department of Materials Engineering, The University of British Columbia, 309-6350 Stores Road, Vancouver, British Columbia, Canada, V6T 1Z4

3. Advanced Materials and Process Engineering Laboratory, The University of British Columbia, 2355 East Mall, Vancouver, British Columbia, Canada V6T 1Z4

4. United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan, MI48084, USA

PT22

Investigating the Size-dependent Properties of Silicon Nanocrystals for Tailoring Optoelectronic Applications

Melanie L. Mastronardi (1), Junho Jeong (2), Nazir P. Kherani (2,3), and Geoffrey A. Ozin (1)

1. Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada

2. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada

3. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada

PT23

Optical Property of B-doped Silicon Nanocrystals Embedded in Silicon Oxide Film

Dongsheng Li, Min Xie, and Deren Yang

State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

PT24

Hydrogenated Nanocrystalline Silicon Films Prepared at High Deposition Rate by Hot Wire Chemical Vapor Deposition Technique

Himanshu S. Jha (1), Asha Yadav (2), M. Singh (1) and Pratima Agarwal (1,2)

1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India -781 039

2. Center for Energy, Indian Institute of Technology Guwahati, Guwahati, India -781039

PT25

Defect Formation Mechanisms and Disorder in Molecular-beam-epitaxy Grown Silicon Epilayers

Arash Akbari-Sharbaf (1), Jean-Marc Baribeau (2), Xiaohua Wu (2), David J. Lockwood (2), and Giovanni Fanchini (1,3)

1. Department of Physics & Astronomy, University of Western Ontario, London, ON, N6A 3K7, Canada

2. National Research Council, Ottawa, ON, K1A 0R6, Canada

3. Department of Chemistry, University of Western Ontario, London, ON, N6A 5B7, Canada

PT26

Investigation of the Structure of the Nitride Silicon Layers by Raman Spectroscopy

Faddey Komarov (1), Altynay Togambayeva (2), Luidmila Vlasukova (1), Irina Parkhomenko (1), Natalya Ankusheva (2), Maxim Makhavikov (1) and Balausa Alpysbayeva (2)

1. Institute of Applied Physics Problems, 7 Kurchatova Str., 220064, Minsk, Belarus

2. Al-Farabi Kazakh National University, 71 Al-Farabi Ave., 050040, Almaty, Kazakhstan

PT27

Optoelectronic Properties and Microstructure of Al-Doped Microcrystalline Silicon Carbide

Florian Köhler, Tao Chen, Christian Sellmer, Torsten Bronger, Anna Heidt, Friedhelm Finger, and Reinhard Carius

IEK-5 Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

PT28

Photoluminescence Properties of Er and Nanocrystalline-Si in SiO2 Films and Aqueous Solutions

H. Katsumata, Y. Komori, K. Hirata, and H. Hara

Department of Electronics and Bioinformatics, Meiji University, Kawasaki 214-8571, Japan

PT29

Experiment and Simulation Study of the Effect of the Crystalline Fraction on the Electronic Properties of μc-Si:H

SIB Jamal Dine (1,2), CHAHI Mokhtar (1,2), CHEMI Aouda (2), BENLAKEHAL Djamel (2), KEBBAB Aissa (2), BOUIZEM Yahya (2) and CHAHED Larbi (2)

1. Ecole Préparatoire en Sciences et Techniques d'Oran EPSTO, BP 64 Achaba Hanifi CH2 Oran

2. Laboratoire de Physique des Couches Minces et Matériaux pour l'Electronique LPCMME, Université d'Oran, 31124 El Mnaouar- Algérie

PT30

Effect of Film Thickness on Electrical Properties of nc-3C-SiC:H/c-Si Heterojunction Diodes Prepared by HW-CVD

Yoshikazu Imori and Akimori Tabata

Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603

Organic Semiconductors
PT31

Exciton-induced Interfacial Degradation in Organic Light-Emitting Devices

Yingjie Zhang, Qi Wang, Mina M. A. Abdelmalek, and Hany Aziz

Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, Canada N2L 3G1

PT32

Dielectric Characteristics of a New Organometallic Nanostructured Polymer Structure Based on the Cu(II) Complex

Vachagan Avanesyan and Catherine Vodkailo

Herzen State Pedagogical University, Moika Emb. 48, 191186 St. Petersburg, Russia

PT33

Nanophotonic Analysis of Doping Organic Semiconductors

Beynor A. Paez-Sierra (1,2), Hernán Rodríguez-Hernández (2) and Fredy Mesa (3)

1. QUBITeXp International Trade S.A.S. Colombia

2. Thin films and Nanophotonics Group, Pontificia Universidad Javeriana, Bogotá Colombia

3. Departamento de Ciencias Básicas, Universidad Libre, Bogotá -Colombia

PT34

Direct Surface Relief Pattering of Azo-polymers Films via Holographic Recording

Jelena Aleksejeva, Mara Reinfelde, and Janis Teteris

Institute of Solid State Physics, University of Latvia, Kengaraga Street. 8, Riga, Latvia, LV-1063

PT35

High Field-effect Mobility of poly(3-alkylthiophene)-based Organic Transistor with Top-gate Configuration

Kenichiro Takagi (1), Takashi Nagase (1,2), Takashi Kobayashi (1,2), and Hiroyoshi Naito (1,2)

1. Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan

2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Sakai 599-8531, Japan

PT36

Energy Level alignment of MoO3 on Organic Semiconductors

R. T. White, L. Chai, M. T. Greiner, and Z. H. Lu

Department of Materials Science and Engineering University of Toronto Toronto, Canada M5S 3E4

PT37

High Efficient Blue Fluorescent Organic Light Emitting Diodes with High Doped Concentration

T. Zhang (1), S. J. He (1), Z. B. Wang (2), D. K. Wang (1), N. Jiang (1), and Z. H. Lu (1,2)

1. Department of Physics, Yunnan University, Kunming, Yunnan 650091, People's Republic of China

2. Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada

PT38

Energy Transfer in Organic Light Emitting Diodes

Grayson L. Ingram (1) and Zhenghong Lu (1,2)

1. Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto Ontario M5S 3E4, Canada

2. Department of Physics, Yunnan University, 2Cuihu Beilu, Kumming 650091, China

PT39

Modeling of Current-voltage Characteristics of Bulk Heterojunction Organic Solar Cells

Salman M. Arnab and M. Z. Kabir

Department of Electrical and Computer Engineering, Concordia University, 1455 Blvd. de Maisonneuve West, Montreal, Quebec, H3G 1M8, Canada

PT40

Effects of Molybdenum Oxide Molecular Doping on the Chemical Structure of poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) and on Carrier Collection Efficiency of c-Si/PEDOT:PSS Heterojunction Solar Cells

Qiming Liu, Ishwor Khatri, Ryo Ishikawa, Keiji Ueno, and Hajime Shirai

Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Saitama 338-8570, Japan

Oxide Glasses and Amorphous Oxides
PT41

Physical and Optical Characterization of TiO2 Nanoparticles Embedded in SOG-Based SiO2 Films

Joel Molina (1), Carlos Zúñiga (1), Mario Moreno (1), Wilfrido Calleja (1), Pedro Rosales (1), Roberto Ambrosio (2), F. Javier de la Hidalga (1), Alfonso Torres (1), Claudia Reyes (1), Edmundo Gutierrez (1), E. Roberto Bandala (3) and José Luis Sánchez (3)

1. National Institute for Astrophysics, Optics and Electronics, Luis E. Erro # 1, Puebla, Pue. México

2. Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310, Chihuahua, México

3. Grupo de Investigación en Energía y Ambiente, Universidad de las Américas, Puebla (UDLAP), México

PT42

Characteristic of Fluorine-doped Tin Oxide Films Deposited by Pulsed Spray Technique

O. Malik, F. J. De la Hidalga-W, R. Ramírez-A

Electronics' Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla, Apdo. 51 y 216, 72000 México

PT43

Ternary Amorphous Metal Oxides: Structural, Electronic and Optical Properties of Amorphous TixSi1–xO2

M. Landmann (1), T. Köhler (2), E. Rauls (1), T. Frauenheim (2), and W. G. Schmidt (1)

1. Lehrstuhl für Theoretische Physik, Universität Paderborn, 33098 Paderborn, Germany

2. Bremen Center for Computational Materials Science, Universität Bremen, 28359 Bremen, Germany

PT44

Nitrogen-doped p-ZnTeO Films and ZnTeO/ZnO Heterojunction Diodes

A. E. Rakhshani

Physics Department, Faculty of Science, Kuwait University, PO Box 5969, Safat 13060, Kuwait

PT45

Production and Characterization of Tm3+/Yb3+ Codoped Pedestal type PbO-GeO2 Waveguides

Thiago Alexandre Alves de Assumpção (1), Luciana Reyes Pires Kassab (2), Maria Armas Alvarado (1) and Marco Isaías Alayo (1)

1. Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, travessa 3 no. 380 - São Paulo, SP - Brazil

2. Faculdade de Tecnologia de São Paulo - CEETEPS, Pça. Coronel Fernando Prestes, 30 - São Paulo, SP - Brazil

a-C and Related Compounds
PT46

In-situ Erbium Metal-Organic Doped Hydrogenated Amorphous Carbon Film by Low Temperature MO-RFPECVD

Hui-Lin Hsu (1), Michael Halamicek (1), Keith R. Leong (1), I-Ju Teng (2,3), Pratish Mahtani (1), Li Qian (1), Nazir P. Kherani (1,4)

1. Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada

2. Centre for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

4. Department of Materials Science and Engineering, University of Toronto, ON M5S 3E4, Canada

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