The 25th International Conference on Amorphous and Nano-crystalline Semiconductors
August 18–23, 2013 Toronto, Ontario Canada
Tuesday Posters
(click on the title for the abstract)
a-Si and Related Compounds | |
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PT01 |
Light-induced Degradation of Multijunction a-Si:H/μc-Si:H Solar Cells 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 2. National Institute of Astrophysics, Optics and Electronics, Puebla, 72840, Mexico 3. R&D Center of Thin Film Technologies in Energetics under Ioffe Institute LLC, 194064 St. Petersburg, Russia |
PT02 |
Electronics, National Institute of Astrophysics Optics and Electronics, Luis Enrique Erro #1, 72840, Puebla, Mexico |
PT03 |
1. M.V. Lomonosov Moscow State University, Physics Department, Moscow, 119991 Russia 2. National Research Centre "Kurchatov Institute", Moscow, 123182 Russia 3. Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ UK |
PT04 |
1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada 2. Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada |
PT05 |
Electronic Properties of Undoped Microcrystalline Silicon Oxide Films 1. Division of Physics, University of Dundee, Nethergate, Dundee DD1 4HN, UK 2. IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany |
PT06 |
IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany |
PT07 |
University of Chinese Academy of Sciences, Beijing 100049, China |
PT08 |
Local Surface Potential on Microcrystalline Silicon Films 1. Department of Electrical and Electronic Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan 2. Environment Renewable Energy System Division, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan |
PT09 |
a-Si:H n-i-p Solar Cells Fabricated at 100°C for High Voc Top Cell of Spectrum Splitting Solar Cells 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan 2. Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan |
PT10 |
1. Taizhou Institute of Science and Technology, Nanjing University of Science and Technology, Taizhou 225300, China 2. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
PT11 |
Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu, JAPAN |
PT12 |
1. Korea Institute of Energy Research - KIER-UNIST Advanced Center for Energy, Ulsan, South Korea 2. Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, Palaiseau, France |
PT13 |
1. Department of Electrical and Computer Engineering, University of Windsor, 401 Sunset Avenue, Windsor, Ontario, Canada N9B 3P4 2. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia, Canada, V1V 1V7 |
PT14 |
Hydrogen Kinetics in a-Si:H and a-SiC:H Thin Films Investigated by Real-time ERD 1. Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa 2. Department of Physics, University of Cape Town, Rondebosch 7700, South Africa 3. Materials Research Department, iThemba LABS, P.O. box 722, Somerset West 7129, South Africa |
PT15 |
Amorphous Silicon Nitride Films Prepared by Reactive Sputtering Course of Electrical and Electronic System, Graduate School of Engineering, Tokai University, 4-1-1 kitakaname, Hiratsuka, Kanagawa 259-1292, Japan |
PT16 |
Infrared Detector Based on Germanium Thin Films Fabricated at Low Temperature (200°C) 1. National Institute of Astrophysics, Optics and Electronics, INAOE, Luis Enrique Erro No. 1, Santa Maria Tonantzintla, Puebla, México 2. Electrical and Computing Department-IIT, UACJ University, Av. Del Charro 450N, 32310, Cd. Juárez, México |
PT17 |
A Comparative Study of the Infrared-sensing Properties of Silicon and Germanium Based Thin Films 1. National Institute of Astrophysics, Optics and Electronics, INAOE, Luis Enrique Erro No. 1, Santa Maria Tonantzintla, Puebla, México 2. Electrical and Computing Department-IIT, UACJ University, Av. Del Charro 450N, 32310, Cd. Juárez, México |
PT18 |
1. Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos 13560-970, SP - Brasil 2. Matériaux Instrumentation Laser, Université de Caen Basse-Normandie, Caen F-14050 cedex 4, Basse-Normandie - France |
PT19 |
Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos 13560-970, SP - Brasil |
Nano-and Microcrystalline Silicon | |
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PT20 |
c-Si/nc-3C-SiC:H Heterojunction Diodes with Buffer Layer Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603 |
PT21 |
1. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia, Canada, V1V 1V7 2. Department of Materials Engineering, The University of British Columbia, 309-6350 Stores Road, Vancouver, British Columbia, Canada, V6T 1Z4 3. Advanced Materials and Process Engineering Laboratory, The University of British Columbia, 2355 East Mall, Vancouver, British Columbia, Canada V6T 1Z4 4. United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan, MI48084, USA |
PT22 |
1. Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada 2. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada 3. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada |
PT23 |
Optical Property of B-doped Silicon Nanocrystals Embedded in Silicon Oxide Film State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
PT24 |
1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India -781 039 2. Center for Energy, Indian Institute of Technology Guwahati, Guwahati, India -781039 |
PT25 |
Defect Formation Mechanisms and Disorder in Molecular-beam-epitaxy Grown Silicon Epilayers 1. Department of Physics & Astronomy, University of Western Ontario, London, ON, N6A 3K7, Canada 2. National Research Council, Ottawa, ON, K1A 0R6, Canada 3. Department of Chemistry, University of Western Ontario, London, ON, N6A 5B7, Canada |
PT26 |
Investigation of the Structure of the Nitride Silicon Layers by Raman Spectroscopy 1. Institute of Applied Physics Problems, 7 Kurchatova Str., 220064, Minsk, Belarus 2. Al-Farabi Kazakh National University, 71 Al-Farabi Ave., 050040, Almaty, Kazakhstan |
PT27 |
Optoelectronic Properties and Microstructure of Al-Doped Microcrystalline Silicon Carbide IEK-5 Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany |
PT28 |
Photoluminescence Properties of Er and Nanocrystalline-Si in SiO2 Films and Aqueous Solutions Department of Electronics and Bioinformatics, Meiji University, Kawasaki 214-8571, Japan |
PT29 |
1. Ecole Préparatoire en Sciences et Techniques d'Oran EPSTO, BP 64 Achaba Hanifi CH2 Oran 2. Laboratoire de Physique des Couches Minces et Matériaux pour l'Electronique LPCMME, Université d'Oran, 31124 El Mnaouar- Algérie |
PT30 |
Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603 |
Organic Semiconductors | |
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PT31 |
Exciton-induced Interfacial Degradation in Organic Light-Emitting Devices Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, Canada N2L 3G1 |
PT32 |
Herzen State Pedagogical University, Moika Emb. 48, 191186 St. Petersburg, Russia |
PT33 |
Nanophotonic Analysis of Doping Organic Semiconductors 1. QUBITeXp International Trade S.A.S. Colombia 2. Thin films and Nanophotonics Group, Pontificia Universidad Javeriana, Bogotá Colombia 3. Departamento de Ciencias Básicas, Universidad Libre, Bogotá -Colombia |
PT34 |
Direct Surface Relief Pattering of Azo-polymers Films via Holographic Recording Institute of Solid State Physics, University of Latvia, Kengaraga Street. 8, Riga, Latvia, LV-1063 |
PT35 |
1. Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan 2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Sakai 599-8531, Japan |
PT36 |
Energy Level alignment of MoO3 on Organic Semiconductors Department of Materials Science and Engineering University of Toronto Toronto, Canada M5S 3E4 |
PT37 |
High Efficient Blue Fluorescent Organic Light Emitting Diodes with High Doped Concentration 1. Department of Physics, Yunnan University, Kunming, Yunnan 650091, People's Republic of China 2. Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada |
PT38 |
Energy Transfer in Organic Light Emitting Diodes 1. Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto Ontario M5S 3E4, Canada 2. Department of Physics, Yunnan University, 2Cuihu Beilu, Kumming 650091, China |
PT39 |
Modeling of Current-voltage Characteristics of Bulk Heterojunction Organic Solar Cells Department of Electrical and Computer Engineering, Concordia University, 1455 Blvd. de Maisonneuve West, Montreal, Quebec, H3G 1M8, Canada |
PT40 |
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Saitama 338-8570, Japan |
Oxide Glasses and Amorphous Oxides | |
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PT41 |
Physical and Optical Characterization of TiO2 Nanoparticles Embedded in SOG-Based SiO2 Films 1. National Institute for Astrophysics, Optics and Electronics, Luis E. Erro # 1, Puebla, Pue. México 2. Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310, Chihuahua, México 3. Grupo de Investigación en Energía y Ambiente, Universidad de las Américas, Puebla (UDLAP), México |
PT42 |
Characteristic of Fluorine-doped Tin Oxide Films Deposited by Pulsed Spray Technique Electronics' Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla, Apdo. 51 y 216, 72000 México |
PT43 |
1. Lehrstuhl für Theoretische Physik, Universität Paderborn, 33098 Paderborn, Germany 2. Bremen Center for Computational Materials Science, Universität Bremen, 28359 Bremen, Germany |
PT44 |
Nitrogen-doped p-ZnTeO Films and ZnTeO/ZnO Heterojunction Diodes Physics Department, Faculty of Science, Kuwait University, PO Box 5969, Safat 13060, Kuwait |
PT45 |
Production and Characterization of Tm3+/Yb3+ Codoped Pedestal type PbO-GeO2 Waveguides 1. Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, travessa 3 no. 380 - São Paulo, SP - Brazil 2. Faculdade de Tecnologia de São Paulo - CEETEPS, Pça. Coronel Fernando Prestes, 30 - São Paulo, SP - Brazil |
a-C and Related Compounds | |
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PT46 |
In-situ Erbium Metal-Organic Doped Hydrogenated Amorphous Carbon Film by Low Temperature MO-RFPECVD 1. Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada 2. Centre for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, Taiwan 3. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan 4. Department of Materials Science and Engineering, University of Toronto, ON M5S 3E4, Canada |
ICANS 25