Plenary and Invited Speakers

Mott Lecture

Hideo HosonoHideo Hosono, Frontier Research Center, Tokyo Institute of Technology, Japan
Amorphous Electrides: A Novel Class of Oxide Semiconductors


25th Anniversary Plenary Lectures

In celebration of the 25th conference in this series, there will be five special plenary lectures.

Sergei BaranovskiSergei Baranovski, Philipps Universität Marburg, Germany
Theory of Charge Transport in Disordered Materials

John Robertson John Robertson, University of Cambridge, United Kingdom
Silicon vs. the Rest

Koichi ShimakawaKoichi Shimakawa, Gifu University, Japan
Electrical Properties of Nanocrystalline Media: Optical Conductivity and Non-Drude Behavior

Robert A. StreetRobert A. Street, Palo Alto Research Center, USA
Disorder Effects in the Electronic Properties of Organic Solar Cells

Martin StutzmannMartin Stutzmann, Technische Universität München, Germany
Substitutional Doping of Amorphous and Nanocrystalline Semiconductors


Invited Speakers

Speaker Title
Christiane Becker/Tobias Sontheimer
Helmholtz Zentrum Berlin, Germany
Towards High-efficiency Polycrystalline Si Thin Film Solar Cells on Glass: Tailoring 3-dimensional Architectures
Pere Roca i Cabarrocas
École Polytechnique, France
Silane Plasmas: A Wonderful Toolbox for Silicon Thin Films and Nanostructured Materials
Reinhard Carius
Forschungszentrum Jülich, Germany
a-Si:H for Photovoltaics: Recent Advances
Stefaan De Wolf
École Polytechnique Fédérale de Lausanne, Switzerland
High-efficiency Amorphous/Crystalline Silicon Heterojunction Solar Cells
Vivian Ferry
University of California Berkeley, USA
Nanophotonic Light Trapping in Ultra-thin Film Solar Cells
Mehmet Güneş
Muğla University, Turkey
Investigation of Metastability Effects in Hydrogenated Microcrystalline Silicon Thin Films by the Steady-state Measurement Methods
Jin Jang
Kyung Hee University, South Korea
Bias-stress Effect in Dual Gate a-IGZO TFTs
Gytis Juška
Vilnius University, Lithuania
Charge Carriers Extraction Techniques for the Investigation of Mobility and Recombination in Disordered Materials
Andrey Kosarev
INAOE, Electronics, Mexico
Thin Film, Uncooled Micro-bolometers Based on Plasma Deposited Materials
Klaus Lips
Helmholtz-Zentrum Berlin, Germany
Atomic Structure of Interface States in a-Si:H / c-Si Heterojuction Solar Cells
Gerald Lucovsky
North Carolina State University, USA
Band Edge and Mid-band-gap Electronic States: Chemical Bonding and Ligand Field Splittings
Sorin Marcovici
XLV, USA
Towards Low Cost X-Ray Imaging Devices using a-Se
Rodrigo Martins
New University of Lisbon, Portugal
Solar Cells on Paper to Power Paper Electronics
Maria Mitkova
Boise State University, USA
Expansion of the Application of Chalcogenide Glasses for Establishment of Radiation Doses Through Electrical Measurements
Hiroyoshi Naito/Takashi Kobayashi
Osaka Prefecture University, Japan
Photocarrier Recombination Kinetics in a Bulk-heterojunction Solar Cell Studied by Photoinduced Absorption Spectroscopy
Arokia Nathan
University of Cambridge, England
Oxide TFTs for Displays and Imaging
Ruud Schropp
Energy Research Center of the Netherlands and Eindhoven University of Technology
3D Morphologies for Back-scattering Contacts of a-Si:H and μc-Si:H Thin Film Solar Cells
Siva Sivoththaman
University of Waterloo, Canada
Ultrathin Silicon Films and Device Architectures for Transparent Photovoltaics
Stan Veprek
Technical University of Munich, Germany
45th Anniversary of Nanocrystalline Silicon: from the Past Towards the Future

ICANS 25